Vishay Intertechnology introduced a new 80 V symmetric dual n-channel power MOSFET that combines high and low side TrenchFET^® Gen IV MOSFETs in a single 3.3 mm by 3.3 mm PowerPAIR^® 3x3FS package.

Built on Trench IGBT Technology, Half-Bridge Devices Offer Choice of Low VCE(ON) or Low Eoff for High-Current Inverter Stages.

Device Offers High Power Density and Improved Thermal Performance in 3.3 mm x 3.3 mm PowerPAK^® 1212 F Package With Center Gate Design.

Device Offers Simple Integration, Precise Signal Detection, and Design Flexibility for Heart Rate Monitoring and Pulse Oximetry Applications in Wearables.

High Speed Devices Save Energy in Industrial Applications While Enabling Usage With Low Voltage Microcontrollers and I²C Bus Systems.

The STH electrolytic capacitors offer superior reliability in avionics and aerospace applications, offering enhanced military H-level shock (500 g) and vibration (sine: 80g; random: 54 g) capabilities, and increased thermal shock up to 300 cycles.

Featuring Ferrite Core Technology, This Through-Hole Device Provides Low DCR to Reduce Power Losses and Increase Efficiency.

Providing Wide Input Voltage Ranges From 4.5 V to 60 V, Versatile Devices Feature Internal Compensation to Reduce External Components.

VSMY5850X01, VSMY5890X01, and VSMY5940X01 Shortlisted in “Semiconductor Product of the Year — Analog” Categor.

850 nm, 890 nm, and 940 nm Devices Offer Radiant Intensity to 13 mW/sr in Compact 0805 SMD Package With Opaque Side Walls and -40 °C to +110 °C Temperature Range.