Nexperia has announced that its GaN FET devices, featuring next-gen high-voltage GaN HEMT technology in proprietary copper-clip CCPAK surface mount packaging, are now available to designers of industrial and renewable energy applications.

Nexperia has announced its first silicon carbide (SiC) MOSFETs with the release of two 1200 V discrete devices in 3-pin TO-247 packaging with RDS(on) values of 40 mΩ and 80 mΩ.

Nexperia has just introduced the NBM7100 and NBM5100 which delivers up to 10x battery life and range extension in IoT devices.

Nexperia expands NextPower 80/100 V MOSFETs portfolio to include LFPAK56 and LFPAK88 packaging, expanding its range of semiconductor solutions.

The comprehensive product range covers every application from 1.8 V to 75 V.

The comprehensive product range covers every application from 1.8 V to 75 V. Nexperia, the expert in essential semiconductors, today announced the industry’s first range of A-selection Zener diodes.

Participate in live discussions on GaN, MOSFETs, power diodes and bipolar transistors for automotive and industrial applications; View on-demand video demos direct from Nexperia’s labs. Nexperia, the expert in essential semiconductors, today announced ‘Power Live’, its second annual virtual conference from 21st-23rd September.

Fastest assembly and electrical test equipment; integrated smart manufacturing solutions using Big Data and machine learning for optimised Industry 4.0.

New investments support global strategy to address growing demand for power semiconductors and boost GaN capabilities.